Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction
Wang Xianjie
Zhao Xiaofeng
Hu Chang
Zhang Yang
Song Bingqian
Zhang Lingli
Liu Weilong
Lv Zhe
Zhang Yu
Tang Jinke
Sui Yu
Song Bo
· 2016
期刊名称：
Applied Physics Letters
2016 年
109 卷
2 期
摘要：
In this paper, we report a large lateral photovoltaic effect (LPE) with ultrafast relaxation time in SnSe/p-Si junctions. The LPE shows a linear dependence on the position of the laser spot, and the position sensitivity is as high as 250 mV mm
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