High-resistance GaN epilayers with low dislocation density via growth mode modification
Xu Z.Y.
Xu Fu-Jun
Wang Jia-Ming
Lu L.
Yang Zhijian
Wang Xinqiang
Shen B.
· 2016
期刊名称：
Journal of Crystal Growth
2016 年
450 卷
摘要：
High-resistance GaN with low dislocation density adopting growth mode modification has been investigated by metalorganic chemical vapor deposition. The sheet resistance of the order of 10
会员登录
