High peak current MOS gate-triggered thyristor with fast turn-on characteristics for solid-state closing switch applications
Chen Wanjun
Liu Chao
Tang Xuefeng
Lou Lunfei
Cheng Wu
Zhou Qi
Li Zhaoji
Zhang Bo
· 2016
期刊名称：
IEEE Electron Device Letters
2016 年
37 卷
2 期
摘要：
In this letter, a MOS gate-triggered thyristor (MGTT) structure with alternating MOS and p-n-p-n thyristor sections is proposed and fabricated with the state-of-the-art commercial insulated gate bipolar transistor (IGBT) process. This structure introduces a p-n-p-n thyristor between the adjacent MOS cells, which brings about strong conductivity modulation in N-drift region and, consequently, ultralow on-state resistance due to the regenerative feedback mechanism. Thus, the proposed MGTT exhibits high peak current (I
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