Investigation of traps at MoS
Yuan Hui-Wen
Shen Hui
Li Jun-Jie
Shao Jinhai
Huang D.M.
Chen Yi-Fang
Wang Peng-Fei
Ding Shi-Jin
Liu Wen-Jun
Chin Albert
Li Ming Fu
· 2016
期刊名称：
IEEE Electron Device Letters
2016 年
37 卷
4 期
摘要：
A new method is proposed to distinguish the contributions of the low-frequency noise (LFN) from the channel and the source/drain Schottky contacts in MOS devices. The method is applied to back-gated nMOSFETs with MoS
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