Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD
Liang F.
Chen Ping
Zhao D.G.
Jiang D.S.
Liu Z.S.
Zhu J.J.
Yang J.
Liu W.
Li Xiao-Min
Liu S.T.
Yang H.
Zhang L.Q.
Liu J.P.
Zhang Yuantao
Du Guotong
· 2016
期刊名称：
Materials Technology
2016 年
摘要：
The field-emission (FE) characteristics of 200 nm-thick Si-doped AlN films with different concentration of Si-dopant is investigated. It is found that the AlN film with lower concentration of Si-dopant has a smaller turn-on voltage, larger maximum current density and more stable FE current. Accompanying with atomic force surface micro-images, it is suggested that the stable current is attributed to a uniform surface, which is related a uniform local field enhancement factors and thus a stable FE current without discontinuous fluctuations. Furthermore, the analysis of scanning electron microscopy indicates that a smaller turn-on voltage and larger maximum current density may result from the electron transport channel of V-defects.
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