Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al

Wang X. Zhang Guozhen Xu Yin Gan X.W. Chen C. Wang Zijing Wang Y. Wang Jiulong Wang Ti Wu Hao Liu C. · 2016

阅读量：400

期刊名称：

Nanoscale Research Letters 2016 年 11 卷 1 期

发表日期：

2016.12.01

摘要：

InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al