A 65 nm CMOS +14 dBm-P

张润曦 · 2016

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出版社：

A 65 nm CMOS +14 dBm-P

会议名称：

Asia-Pacific Microwave Conference, APMC 2015

会议地点：

Nanjing

发表日期：

2016.02.18

摘要：

This paper presents an 81-86 GHz E-band power amplifier fabricated with 65 nm CMOS process. A passive splitter is designed to transfer a pair of differential signal into two pairs of differential signals and satisfy phase requirement of output parallel power combiner. A substitution method is presented to trade off the simulation time and accuracy while using EM simulator to characterize the MOS transistor's access lines with stacked via arrays. The proposed PA achieves 9.5 dBm P