Improved characteristics of ultraviolet AlGaN multiple-quantum-well laser diodes with step-graded quantum barriers close to waveguide layers

Cai Xuefen Li Shu-Ping Kang Junyong · 2016

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氮化铝镓

阶梯渐变量子屏障

紫外激光二极管

期刊名称：

Superlattices and Microstructures 2016 年 97 卷

发表日期：

2016.09.01

摘要：

Ultraviolet AlGaN multiple-quantum-well laser diodes (LDs) with step-graded quantum barriers (QBs) instead of conventional first and last QBs close to waveguide layers are proposed. The characteristics of this type of laser diodes are numerically investigated by using the software PICS3D and it is found that the performances of these LDs are greatly improved. The results indicates that the structure with step-graded QBs exhibits higher output light power, slope efficiency and emission intensity, as well as lower series resistance and threshold current density under the identical condition, compared with conventional LD structure.