Analysis of series SiC MOSFETs stack using a single standard gate driver
出版社：
Analysis of series SiC MOSFETs stack using a single standard gate driver
会议名称：
8th IEEE International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016
摘要：
An overview of existing MOSFET series topologies with single gate driver is given and a newly-designed topology using two SiC MOSFET is proposed in this paper. Thereafter, operation principles including both static sate and switching transitions are analyzed. The LTspice simulation in the last part validate the analysis and show the availability of the SiC MOSFET series topology using single gate driver.
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