Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices
Zheng Tongchang Lin Wei Liu R. Cai Duanjun Li Jin-Chai Li Shu-Ping Kang Junyong · 2016
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期刊名称:
Scientific Reports   2016 年 6 卷
发表日期:
2016.02.24
摘要:
A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger p
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