A broadband 47–67 GHz LNA with 17.3 dB gain in 65-nm CMOS
electromagnetic simulation
期刊名称：
Journal of Semiconductors
2015 年
10 期
摘要：
A broadband 47–67 GHz low noise amplifier(LNA) with 17.3 d B gain in 65-nm CMOS technology is proposed.The features of millimeter wave circuits are illustrated first and design methodologies are discussed.The wideband input matching of the LNA was achi...
会员登录
