Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

朱志甫张贺秋梁红伟彭新村邹继军汤彬杜国同 · 2017

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GaN

Characterization of Interface State Density of Ni

p-GaN Structures by Capacitance

Conductance-Voltage-Frequency Measurements

期刊名称：

Chinese Physics Letters 2017 年 09 期

摘要：

For the frequency range of 1 kHz-10 MHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage(C-V) and conductance-frequency-voltage(G-f-V) measurements at room temperature.To obtain the real capacitance and interfac...