The impact of Al_2O_3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se

The impact of Al_2O_3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se_2 solar cells

刘杨刘玮陈梦馨史思涵何志超巩金龙王拓周志强刘芳芳孙云徐术 · 2018

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期刊名称：

Optoelectronics Letters 2018 年 05 期

摘要：

With reducing the absorber layer thickness and processing temperature,the recombination at the back interface is severe,which both can result in the decrease of open-circuit voltage and fill factor.In this paper,we prepare Al_2O_3 by atomic layer depos...