Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates
侯朝昭
王桂磊
项金娟
姚佳欣
吴振华
张青竹
殷华湘
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Dielectrics and SiGe Epitaxial Substrates
Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High
摘要:
A novel high-κ, Al_2O_3/HfO_2/Al_2O_3 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable ch...