Mixed-phase Ni-Al as barrier layer against perovskite oxides to react with Cu for ferroelectric memory with Cu metallization
Chen J.H.
Dai X.H.
Li Chaorong
Cui Y.L.
ZHAO Q.X.
Guo J.X.
Li X.H.
Zhang X.Y.
Wang Y.L.
Ma L.X.
Liu Baoting
· 2016
期刊名称：
Journal of Alloys and Compounds
2016 年
666 卷
摘要：
The microstructures, interfaces, and physics properties of the devices with multifunctional barrier materials are investigated to achieve integration of perovskite oxide films with Cu film on Si for the application in nonvolatile Si-based ferroelectric random access memories (FeRAMs) with the on-chip copper metallization of advanced microelectronic devices. La
会员登录
