Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs
Chen Zhaoying
Zheng Xiantong
Li Zhilong
Wang Ping
Rong Xin
Wang Tao
Yang X.L.
Xu Fu-Jun
Qin Zhixin
Ge Weikun
Shen B.
Wang Xinqiang
· 2016
期刊名称：
Applied Physics Letters
2016 年
109 卷
6 期
摘要：
We report a 23.4% improvement of conversion efficiency in solar cells based on InGaN/GaN multiple quantum wells by using a patterned sapphire substrate in the fabrication process. The efficiency enhancement is due to the improvement of the crystalline quality, as proven by the reduction of the threading dislocation density. More importantly, the better crystalline quality leads to a positive photovoltaic efficiency temperature coefficient up to 423 K, which shows the property and advantage of wide gap semiconductors like InGaN, signifying the potential of III-nitride based solar cells for high temperature and concentrating solar power applications.
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