A broadband 47-67 GHz LNA with 17.3 dB gain in 65-nm CMOS

Wang Chong Li Zhiqun Li Qin Liu Yang Wang Zhi-Gong · 2015

阅读量：186

60 GHz的

期刊名称：

Journal of Semiconductors 2015 年 36 卷 10 期

发表日期：

2015.10.01

摘要：

A broadband 47-67 GHz low noise amplifier (LNA) with 17.3 dB gain in 65-nm CMOS technology is proposed. The features of millimeter wave circuits are illustrated first and design methodologies are discussed. The wideband input matching of the LNA was achieved by source inductive degeneration, which is narrowband in the low-GHz range but wideband at millimeter-wave frequencies due to the existence of gate-drain capacitance, C