Thin Solid Films   2016 年 615 卷

2016.09.30

High transmittance Ga-doped ZnO thin films were deposited on glass substrates using sol-gel spin coating technique. Crystallinity levels, microstructures, optical and electrical properties of the thin films were systematically investigated by scanning electron microscope, X-ray diffractometer, UV??“visible spectrophotometer, PL spectrometer and four-point probe method, respectively. All GZO thin films exhibited polycrystalline with a hexagonal wurtzite structure and slight (0 0 2) preferred orientation growth, which show excellent transmittance (>??95%) in the 380??“780??nm wavelength range. The PL spectra of the GZO films revealed a strong ultraviolet emission peaks at around 393??nm and a weak blue emission peak at around 468??nm. When the Ga doping level was 4??at.%, the minimum resistivity of 1.12???—??10