Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology

Wang Guilei Qin Changliang Yin Huaxiang Luo Jun Duan Ningyuan Gao Xing-Yu Yang Tao Li Junfeng Yan Jiang Zhu Huilong Wang Wenwu Chen Dapeng Ye Tian-Chun Zhao C. Radamson Henry H. · 2016

阅读量：442

鳍式场效电晶体

高K金属栅

反应

SiGe选择性外延

期刊名称：

Microelectronic Engineering 2016 年 163 卷

发表日期：

2016.09.01

摘要：

In this study, the process integration of SiGe selective epitaxy on source/drain regions, for 16/14 nm nodes FinFET with high-k & metal gate has been presented. Selectively grown Si