Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate
Che Yongli
Zhang Yating
Cao Xiaolong
Song Xiaoxian
Cao Mingxuan
Dai Haitao
Yang Junbo
Zhang Guizhong
Yao Jianquan
· 2016
期刊名称：
Applied Physics Letters
2016 年
109 卷
1 期
摘要：
Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (?”V
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