Ion-sensitive field-effect transistor with sSi/Si

Wen Jiao Liu Qiang Liu Chang Wang Yize Zhang Bo Xue Zhongying Di Z.F. Min Jiahua Yu Wenjie Liu X.K. Wang Xi Zhao Qing-Tai · 2016

阅读量：95

期刊名称：

Microelectronic Engineering 2016 年 163 卷

发表日期：

2016.09.01

摘要：

An ion-sensitive field-effect transistor (ISFET) with improved sensing current and voltage sensitivity is realized by using a sSi/Si